Title :
Schottky-barrier devices with low barrier height
Author :
Kajiyama, K. ; Sakata, S. ; Mizushima, Y.
Author_Institution :
Electrical Communication Laboratories, Musashino, Tokyo, Japan
Abstract :
It is calculated that the barrier height of the Schottky diode has an optimum value of ∼0.3 V for the detector, the harmonic generator, and the frequency converter at high frequency. The low barrier height can be realized by the mixed crystal (n-type) composed of InAs (i.e., InxGa1-xAs,InAsyP1-y, and InxGa1-xAsyP1-y).
Keywords :
Capacitance; Detectors; Equivalent circuits; Frequency conversion; Gallium arsenide; Power generation; Proposals; Schottky diodes; Varactors; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9614
