Title :
Ion-implanted complementary IMPATT diodes for D-band
Author :
Lee, D.H. ; Ying, R.S.
Author_Institution :
Hughes Research Laboratories, Malibu, Calif.
Abstract :
Complementary silicon single-drift-region IMPATT diodes designed to operate above 100 GHz have been fabricated with ion-implanted dopant profiles. Continuous-wave output powers of 140 mW with 2.8-percent conversion efficiencies were obtained at 142 GHz.
Keywords :
Acceleration; Boron; Communication system control; Diodes; Eigenvalues and eigenfunctions; Epitaxial layers; Equations; Estimation theory; Silicon; Substrates;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9620
