Title :
Ultra Temperature-Stable Bulk-Acoustic-Wave Resonators with SiO 2 Compensation Layer
Author :
Yu, Hongyu ; Pang, Wei ; Zhang, Hao ; Kim, Eun Sok
Author_Institution :
Univ. of Southern California, Los Angeles
fDate :
10/1/2007 12:00:00 AM
Abstract :
This paper describes temperature compensated bulk acoustic-wave resonators (BAR) with temperature coefficient of frequency (TCF) less than 1 ppm/degC at above 3 GHz. The temperature compensation is produced from the unique physical property of silicon dioxide´s positive TCF, unlike most other materials that have negative TCF. Two types of resonators have been explored: film bulk acoustic resonator (FBAR) composed of Al/ZnO/Al/SiO2 on a surface micromachined cantilever that is released by XeF2 vapor etching and high-overtone acoustic resonator (HBAR) composed of an Al/ZnO/Al resonator on a bulk micromachined SiO2/Si/SiO2 supporting substrate.
Keywords :
II-VI semiconductors; aluminium; bulk acoustic wave devices; crystal resonators; etching; silicon compounds; thin film devices; zinc compounds; Al-ZnO-Al-SiO2; SiO2-Si-SiO2 supporting substrate; XeF2 vapor etching; bulk-acoustic-wave resonators; compensation layer; film bulk acoustic resonator; high-overtone acoustic resonator; silicon dioxide positive TCF; surface micromachined cantilever; tempeature coefficient of frequency; temperature compensation; Capacitors; Film bulk acoustic resonators; Filters; Local oscillators; Packaging; Resonant frequency; Substrates; Temperature; Voltage-controlled oscillators; Zinc oxide;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2007.505
