DocumentCode
933086
Title
Comments, with reply, on "AlGaAs/GaAs HBT for high-temperature application" by K. Fricke et al
Author
Yuan, J. S S
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Volume
40
Issue
9
fYear
1993
Firstpage
1717
Lastpage
1718
Abstract
The commenter discusses several aspects of the above-titled work by K. Fricke et al. (ibid., vol. 39, pp. 1977-1981, Sept. 1992). These concern the physics of the saturation in an HBT and the collector leakage current. In their reply, to demonstrate the second effect, Fricke et al. report that the collector leakage current at different ambient temperatures was measured in common base configuration. They discuss the influence of the hole leakage current on the base current.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; AlGaAs-GaAs; HBT; base current; collector leakage current; hole leakage current; semiconductors; Current measurement; Diodes; Electron emission; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Physics; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.231583
Filename
231583
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