A traveling-wave high electron mobility transistor

Author

Anand, M.B. ; Ghosh, Prasanta K. ; Kornreich, P.G. ; Nicholson, D.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Syracuse Univ., NY, USA

Volume

41

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

624

Lastpage

631

Abstract

A traveling-wave high electron mobility transistor (THEMT) is proposed. The device is unique in that it includes an integral distributed load resistor and uses a HEMT as the active device. A rigorous analysis of the device is carried out, using a small-signal equivalent circuit model for an incremental section of the device. Losses and reflected waves are not neglected, as has been done in other work. Treating the device as a four-port network, closed-form expressions for S-parameters are derived. Theoretical calculations, using equivalent circuit parameter values for a HEMT reported in the literature, show that the proposed device is capable of exponential increase in gain with device width. Power gain of more than 10 dB at 50 GHz and remarkably flat response in the frequency range 10-100 GHz are shown to be achievable for a 1-mm-wide device

Keywords

S-parameters; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 10 to 100 GHz; 50 dB; HEMT; S-parameters; THEMT; device width; four-port network; high electron mobility transistor; integral distributed load resistor; losses; power grain; reflected waves; small-signal equivalent circuit model; traveling-wave; Electron mobility; Equivalent circuits; FETs; Frequency; HEMTs; Helium; MODFETs; Resistors; Scattering parameters; Transmission lines;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.231656

Filename

231656