Title :
Effect of heat treatment on the nature of traps in epitaxial GaAs
Author :
Hasegawa, F. ; Majerfeld, A.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
By annealing v.p.e. GaAs at increasing temperatures, the commonly observed 0.83 eV electron trap in v.p.e. and bulk GaAs is removed and a 0.64 eV hole trap, also detected in l.p.e. GaAs, is introduced. The results indicate that these electron and hole traps are related to Ga and As vacancies, respectively.
Keywords :
III-V semiconductors; annealing; electron traps; gallium arsenide; vacancies (crystal); annealing; electron trap; epitaxial GaAs; heat treatment effect; hole trap; vacancies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760042
