• DocumentCode
    935987
  • Title

    X-band performance of GaAs power f.e.t.s

  • Author

    Macksey, H.M. ; Adams, R.L. ; McQuiddy, D.N. ; Wisseman, W.R.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, USA
  • Volume
    12
  • Issue
    2
  • fYear
    1976
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.
  • Keywords
    field effect transistors; power transistors; solid-state microwave devices; 9 GHz; GaAs power FETs; X-band performance; output powers; power added efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760044
  • Filename
    4239590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=935987