DocumentCode
936680
Title
Nickel-silicidation process using hydrogen implantation
Author
Choi, C.-J. ; Song, S.-A. ; Ok, Y.-W. ; Seong, T.-Y.
Author_Institution
Anal. Eng. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
Volume
40
Issue
6
fYear
2004
fDate
3/18/2004 12:00:00 AM
Firstpage
391
Lastpage
393
Abstract
The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.
Keywords
X-ray photoelectron spectra; hydrogen; ion implantation; leakage currents; nickel compounds; oxidation; NiSi oxidation; NiSi:H; X-ray photoemission spectra; hydrogen implantation; junction leakage current; nickel silicide process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040251
Filename
1278129
Link To Document