• DocumentCode
    936698
  • Title

    C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands

  • Author

    Ino, M. ; Ishibashi, Takayuki ; Ohmori, M.

  • Author_Institution
    NTT, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    12
  • Issue
    6
  • fYear
    1976
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+¿p¿n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.
  • Keywords
    IMPATT diodes; ion implantation; semiconductor device manufacture; solid-state microwave devices; 200 GHz; 300 GHz; CW oscillation; CW output powers; ion implantation; p+-p-n+ Si IMPATT diodes; submillimetre wave Si single drift region IMPATT diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760115
  • Filename
    4239665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936698