• DocumentCode
    936879
  • Title

    Production and properties of Al2O3 layers on silicon substrates

  • Author

    Alexandrova, S. ; Atanasova, K. ; Ivanovich, M. ; Kamadjiev, P. ; Kirov, K. ; Simeonov, S.

  • Author_Institution
    Bulgarian Academy of Sciences, Institute of Solid State Physics, Sofia, Bulgaria
  • Volume
    12
  • Issue
    7
  • fYear
    1976
  • Firstpage
    169
  • Lastpage
    170
  • Abstract
    A method for preparation of thin Al2O3 films using pyrolytic reactions is proposed and some electrical and optical properties of the films are investigated. The applicability of the films as an active dielectric in m.o.s. structures is discussed.
  • Keywords
    aluminium compounds; insulating thin films; metal-insulator-semiconductor structures; Al2O3 layers; MOS structures; Si substrates; active dielectric; electrical properties; optical properties; pyrolytic reactions; thin Al2O3 films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760132
  • Filename
    4239683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936879