DocumentCode :
936879
Title :
Production and properties of Al2O3 layers on silicon substrates
Author :
Alexandrova, S. ; Atanasova, K. ; Ivanovich, M. ; Kamadjiev, P. ; Kirov, K. ; Simeonov, S.
Author_Institution :
Bulgarian Academy of Sciences, Institute of Solid State Physics, Sofia, Bulgaria
Volume :
12
Issue :
7
fYear :
1976
Firstpage :
169
Lastpage :
170
Abstract :
A method for preparation of thin Al2O3 films using pyrolytic reactions is proposed and some electrical and optical properties of the films are investigated. The applicability of the films as an active dielectric in m.o.s. structures is discussed.
Keywords :
aluminium compounds; insulating thin films; metal-insulator-semiconductor structures; Al2O3 layers; MOS structures; Si substrates; active dielectric; electrical properties; optical properties; pyrolytic reactions; thin Al2O3 films;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760132
Filename :
4239683
Link To Document :
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