Title :
Vertical multiple-quantum-well directional-coupler switch with low switching voltage
Author :
Yamaguchi, Takeharu ; Tada, Kunio ; Ishikawa, Takuya
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
A novel device structure of the vertical directional-coupler optical switch with multiple quantum wells (MQWs) is proposed and fabricated. All the clad, guide, and separation layers are superlattices of Al/sub 0.3/Ga/sub 0.7/As and GaAs. This leads to a better control of the complete coupling length. The main feature of the proposed structure is that the refractive index modulation due to the quantum confined Stark effect (QCSE) is applied only to the undoped central region of the separation layer. It is found that this leads to reduction of the switching voltage. In an actual sample 138 mu m long, a switching voltage of 5 V has been obtained.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; integrated optics; optical couplers; optical modulation; optical switches; refractive index; semiconductor switches; 138 micron; 5 V; Al/sub 0.3/Ga/sub 0.7/As; GaAs; MQW; cladding layers; coupling length; device structure; guide layers; low switching voltage; multiple-quantum-well; quantum confined Stark effect; refractive index modulation; semiconductor superlattices; separation layer; separation layers; switching voltage; undoped central region; vertical directional-coupler optical switch; Gallium arsenide; Low voltage; Optical coupling; Optical refraction; Optical superlattices; Optical switches; Optical variables control; Quantum well devices; Refractive index; Thickness control;
Journal_Title :
Photonics Technology Letters, IEEE
