>30 G Omega isolation of GaAs devices on doped Si via undoped buffer layers-application to symmetric self-electrooptic effect devices

Author

Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y. ; Walker, J.A.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

4

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

763

Lastpage

765

Abstract

The authors demonstrate that by using undoped GaAs buffer layers, high-quality GaAs devices (in this case, surface-normal reflection modulator/detectors) may be grown on doped silicon substrates with >30-G Omega isolation. The resistivity of the buffer layers is estimated to be >2.4*10/sup 7/ Omega -cm. Isolation is demonstrated by forming a symmetric self-electrooptic effect device of two of the modulators. Bistable contrasts of 2.9:1 and 1.8:1 are obtained with 7-V and 2-V supply biases, respectively.<>

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; optical bistability; optical modulation; silicon; 2 V; 7 V; bistable contrasts; high-quality GaAs devices; isolation; modulators; resistivity; semiconductors; surface-normal reflection modulator/detectors; symmetric self-electrooptic effect devices; undoped GaAs buffer layers; Buffer layers; Detectors; Dielectric substrates; Gallium arsenide; Optical bistability; Optical buffering; Optical receivers; Optical sensors; Quantum well devices; Silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.145265

Filename

145265