780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

Tensile-strained active layer GaAs/AlGaAs separate-confinement-heterostructure quantum-well lasers are reported. These lasers oscillate in the 780 nm band in the TM mode by TM mode gain enhancement in the tensile-strained active layer. The threshold current density of single-quantum-well laser diodes increases rapidly with heatsink temperature. However, triple-quantum-well laser diodes with a cavity length of 485-110 mu m oscillated with a threshold current density of 1.4 and 3.0 kA/cm².