Title :
Small-signal subthreshold model for i.g.f.e.t.s
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Theoretical considerations supported by practical measurements indicate that the small-signal low-frequency behaviour of i.g.f.e.t.s, operating with a significant VDS bias and 1 nA < ID < 1¿A, can be represented by a simple model.
Keywords :
field effect transistors; semiconductor device models; IGFET; small signal subthreshold model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760201
