Title :
A 2 - 18 - GHz Monolithic Distributed Amplifier Using Dual-Gate GaAs FET´s
Author :
Kennan, W. ; Andrade, T. ; Huang, C.C.
Abstract :
This paper describes a 2- 18-GHz monolithic distributed amplifier with over 6-dB gain, +- 0.5-dB gain flatness, and less than 2.0:1 VSWR. Measured noise figure is below 7.5 dB, and power output capability is greater than 17 dBm. The amplifier is designed with dual-gate GaAs FET´s instead of single-gate FET´s for maximum gain over the design bandwidth. Cascaded amplifier performance will also be presented.
Keywords :
Bandwidth; Distributed amplifiers; Equivalent circuits; FETs; Gallium arsenide; Impedance; Noise measurement; Parasitic capacitance; Power measurement; Transmission line theory;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1984.1132916
