Title :
High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor
Author :
Beneking, H. ; Mischel, H. ; Schul, G.
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Abstract :
A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the `wide-gap-emitter¿ effect. High internal current gain (>2000) has been achieved.
Keywords :
III-V semiconductors; bipolar transistors; p-n heterojunctions; phototransistors; >2000 gain; Ga1-xAlxAs-GaAs phototransistor; heterojunction transistors; heterostructure phototransistor; high gain transistors; high internal current gain; npn structure; wide gap emitter transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760303
