Title :
GaAs field-effect transistors by selective sulphur-ion implantation
Author :
Mizutani, Tomoko ; Ishida, Shigesuke ; Fujimoto, Mitoshi
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.
Keywords :
field effect transistors; ion implantation; semiconductor device manufacture; solid-state microwave devices; 30 GHz; FET; GaAs; field effect transistor; maximum oscillation frequency; selective S ion implantation; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760328
