• DocumentCode
    938870
  • Title

    GaAs field-effect transistors by selective sulphur-ion implantation

  • Author

    Mizutani, Tomoko ; Ishida, Shigesuke ; Fujimoto, Mitoshi

  • Author_Institution
    NTT, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    12
  • Issue
    17
  • fYear
    1976
  • Firstpage
    431
  • Lastpage
    432
  • Abstract
    GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.
  • Keywords
    field effect transistors; ion implantation; semiconductor device manufacture; solid-state microwave devices; 30 GHz; FET; GaAs; field effect transistor; maximum oscillation frequency; selective S ion implantation; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760328
  • Filename
    4239928
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=938870