A Monolithic Differential Coupling Mechanism for Dielectric Resonators Excitation in Conductive Silicon Substrates

Author

Hamed, Karim W. ; Freundorfer, Al P. ; Antar, Yahia M M

Author_Institution

Mimix Broadband, Inc, Houston, TX

Volume

17

Issue

1

fYear

2007

Firstpage

25

Lastpage

27

Abstract

This letter describes the design and performance characteristics of a new monolithic K_a-band differential printed dipole launcher that is used to excite a dielectric resonator (DR) in the presence of a conducting silicon substrate. The configuration was fabricated using the IBM SiGeHP5 process and was experimentally tested. Good agreement is obtained between the simulations and experimental results for the TE_01delta mode of cylindrical DRs. The developed excitation mechanism can be used with fully integrated differential DR oscillators or on-chip DR antennas implemented using silicon-based technology

Keywords

Ge-Si alloys; dielectric resonator antennas; dielectric resonator oscillators; substrates; IBM SiGeHP5 process; SiGe; TE016 mode; conductive silicon substrates; dielectric resonator oscillators; dielectric resonators excitation; integrated differential oscillators; monolithic Ka-band dipole launcher; monolithic differential coupling mechanism; Couplings; Dielectric resonator antennas; Dielectric substrates; Frequency; Germanium silicon alloys; Integrated circuit technology; Millimeter wave integrated circuits; Millimeter wave technology; Oscillators; Silicon germanium; $TE_{01delta}$ mode; Dielectric resonator antennas (DRAs); SiGe; dielectric resonator oscillator (DRO); silicon;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.887245

Filename

4052368