DocumentCode
940260
Title
New V-groove double-diffused m.o.s. (v.d.m.o.s.)
Author
Yu, S.-Y. ; Ou-Yang, P.
Author_Institution
State University of New York, Department of Eletrical Sciences, Stony Brook, USA
Volume
12
Issue
23
fYear
1976
Firstpage
605
Abstract
A new V-groove double-diffused m.o.s. (v.d.m.o s.) is proposed which combines the V-groove technology and the double-diffused m.o.s. (d.m.o.s.) technology. The fabrication processes arc qualitatively described. The gate is located on the vertical V-shaped surface, and the effective channel length is controlled by the vertical-diffusion process of the double-diffusion step. The v.d.m.o.s. is expected to have a faster speed and higher production yield than the ordinary d.m.o.s.
Keywords
field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; semiconductor technology; V-groove double diffused MOS transistors; VDMOS technology; effective channel length; fabrication processes; faster speed; higher production yield; vertical diffusion controlled channel length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760461
Filename
4240204
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