Three-dimensional MBCFET as an ultimate transistor

Author

Lee, Sung-Young ; Kim, Sung-Min ; Yoon, Eun-Jung ; Oh, Chang Woo ; Chung, Ilsub ; Park, Donggun ; Kim, Kinam

Author_Institution

R&D Center, Samsung Electron. Co., Kyungki-Do, South Korea

Volume

25

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

217

Lastpage

219

Abstract

We successfully fabricated the three-dimensional multibridge channel MOSFET (MBCFET) with the channel length of 240 nm by using epitaxial growth technology and damascene gate process. Its subthreshold swing is 60 mV/dec, a nearly ideal value, resulting from the thin body completely surrounded by the gate. And its current drivability is 4.6 times larger than that of a planar dynamic random access memory (DRAM) MOSFET. This outstanding performance of MBCFET originates from the vertically increased width due to the multibridge channel, and the enhanced mobility due to the reduced vertical electric field in the thin body.

Keywords

MOSFET; epitaxial growth; 3-D MBCFET; channel length; current drivability; damascene gate process; electron mobility; epitaxial growth; multibridge channel MOSFET; planar dynamic random access memory MOSFET; subthreshold swing; transistor; vertical electric field; Epitaxial growth; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Random access memory; Research and development; Silicon compounds; Silicon germanium; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.825199

Filename

1278561