Photocurrent spectroscopy for quantum-well intermixed photonic integrated circuit design

Author

Morrison, Gordon B. ; Skogen, Erik J. ; Wang, Chad S. ; Raring, James W. ; Chang, Yu-Chia ; Sysak, Matt ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

Volume

17

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

1414

Lastpage

1416

Abstract

Photocurrent spectroscopy is used to characterize band edges in quantum-well intermixed InGaAsP material lattice matched to InP. The band edge absorption data is used as a design tool to predict the dc performance of electroabsorption modulators, and is shown to agree well with data obtained from actual devices. In addition, we demonstrate the presence of an exciton peak in InGaAsP quantum wells, and present its evolution as a function of quantum-well intermixing and reverse bias voltage.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; energy gap; excitons; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical design techniques; photoconductivity; photodiodes; semiconductor quantum wells; InGaAsP; InGaAsP quantum wells; band edge absorption; dc performance; electroabsorption modulators; exciton; lattice matching; photocurrent spectroscopy; photodiodes; photonic integrated circuit design; quantum-well intermixing; reverse bias voltage; Absorption; Excitons; Indium phosphide; Lattices; Photoconductivity; Photonic integrated circuits; Quantum well devices; Quantum wells; Spectroscopy; Voltage; Electroabsorption modulators (EAMs); excitons; laser tuning; photoconductivity; photodiodes; quantum-well intermixing (QWI); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.848543

Filename

1453628