Title :
A 40-GHz frequency divider in 0.18-μm CMOS technology
Author :
Lee, Jri ; Razavi, Behzad
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
An analysis of regenerative dividers predicts the required phase shift or selectivity for proper operation. A divider topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances. Configured as two cascaded ÷2 stages, the circuit achieves a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency dividers; inductors; CMOS technology; Miller divider; device capacitance tuning; divider topology; frequency divider; on-chip spiral inductors; phase shift; regenerative dividers; resonance techniques; CMOS technology; Capacitance; Circuit topology; Delay; Frequency conversion; Low pass filters; Mixers; Power harmonic filters; Radio frequency; Resonance;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.825119
