Experimental Analysis of Punch-Through Conditions in Power P-I- N Diodes

Author

Salah, T.B. ; Buttay, Cyril ; Allard, Bruno ; Morel, Hervé ; Ghédira, Sami ; Besbes, Kamel

Author_Institution

Centre de Genie Electrique de Lyon, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne

Volume

22

Issue

1

fYear

2007

Firstpage

13

Lastpage

20

Abstract

Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found

Keywords

Zener diodes; avalanche diodes; electric breakdown; epitaxial layers; p-i-n diodes; P-I-N diodes; breakdown voltage; commercial power diodes; diode epitaxial layer width; feature punch-through conditions; transient performance; Breakdown voltage; Doping profiles; Epitaxial layers; Instruments; Ionization; Power electronics; Power system modeling; Semiconductor diodes; Semiconductor process modeling; Testing; $p$ -type, intrinsic, $n$-type ( $P$–$I$– $N$) diode; Avalanche; punch-through (PT); reverse-recovery;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2006.886648

Filename

4052434