• DocumentCode
    941018
  • Title

    Noise performance of microwave GaAs f.e.t. amplifiers at low temperatures

  • Author

    Miller, Robert E. ; Phillips, T.G. ; Iglesias, D.E. ; Knerr, R.H.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    13
  • Issue
    1
  • fYear
    1977
  • Firstpage
    10
  • Lastpage
    11
  • Abstract
    4 GHz measurements have been made of the noise temperature of Bell Laboratories microwave GaAs f.e.t. amplifiers cooled to liquid-nitrogen temperatures (78 K). An optimum noise temperature of about 30 K (0.4 dB noise figure) was obtained, compared with the room-temperature value of 152 K (1.8 dB).
  • Keywords
    Schottky gate field effect transistors; electron device noise; microwave amplifiers; solid-state microwave circuits; 4 GHz measurements; MESFET; microwave GaAs FET amplifiers; noise temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770008
  • Filename
    4240331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=941018