Title :
Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.
Author :
Tucker, Rodney ; Rauscher, C.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
A simple analytical model of the 3rd-order intermodulation-distortion properties of a GaAs field-effect transistor is proposed. The model takes into account the distortion-producing nonlinearities of the Schottky-bairier junction, the trans-conductance and the drain conductance. Parameters of the model are presented for a GaAs f.e.t. of 0.5 ¿m gate length, and the model-predicted distortion characteristics are compared with measured data.
Keywords :
Schottky gate field effect transistors; electric distortion; intermodulation; 3rd order intermodulation distortion properties; analytical model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770370
