Title :
1/f noise of continuous-wave semiconductor lasers
Author_Institution :
Swiss Federal Institute of Technology, Department of Electronics, Zurich, Switzerland
Abstract :
Using linearised rate equations, the intensity fluctuations in the output of c.w. d.h. GaAlAs-diode lasers have been calculated in the low-frequency range, where the flicker noise dominates. The theoretical results are compared with the optical-intensity fluctuations, which are obtained experimentally. Our measurements indicate that 1/f noise in lasers is mainly caused by 1/f noise from carrier transport in the bulk material and the contacts.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; random noise; semiconductor junction lasers; 1/f noise; DH lasers; GaAlAs diode lasers; continuous wave semiconductor lasers; flicker noise; intensity fluctuations; linearised rate equations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770441
