• DocumentCode
    943307
  • Title

    Structural and electrical profiles for double damage layers in ion-implanted silicon

  • Author

    Sadana, D.K. ; Fletcher, J. ; Booker, G.R.

  • Author_Institution
    University of Oxford, Department of Metallurgy & Science of Materials, Oxford, UK
  • Volume
    13
  • Issue
    21
  • fYear
    1977
  • Firstpage
    632
  • Lastpage
    633
  • Abstract
    (111) Si specimens were implanted at room temperature with 5 × 1014 cm¿2, 120 keVP+ ions, and annealed at 950°C. Transmission electron-microscope cross-section specimens revealed two discrete damage layers at depths of 95 and 190 nm. Electrical profiles showed decreases in carrier concentration and/or mobility at these two depths.
  • Keywords
    carrier density; carrier mobility; elemental semiconductors; ion implantation; silicon; transmission electron microscope examination of materials; Si; carrier concentration; double damage layers; electrical profiles; ion implanted Si; mobility;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19770452
  • Filename
    4240596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=943307