Title :
Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s
Author :
Rauscher, C. ; Tucker, Rodney
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
A technique for characterising the 3rd-order intermodulationdistortion properties of GaAs f.e.t.s as a function of the load admittance presented to the output of the device is described. These properties can be determined for virtually any load admittance, including a purely reactive termination. A practical f.e.t example is included for illustration.
Keywords :
electric distortion measurement; field effect transistors; intermodulation measurement; GaAs FET; load admittance; reactive termination; third order intermodulation distortion measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19770496
