The SIMTRON concept

Author

Ettenberg, Morris ; Friz, Walter

Author_Institution

RCA David Sarnoff Res. Center, Princeton, NJ, USA

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2607

Lastpage

2610

Abstract

A theory for a novel form of a high-frequency amplifier which is suitable for realization in a vacuum microelectronics structure is presented. The cathode is a linear array of field emitters or a linear ridge emitter. The RF structure is a coplanar waveguide (CPW) which may be fabricated by planar techniques. The CPW is a TEM transmission line, and the interaction may be regarded as an extended triode with spatial variation according to the wavelength; hence, the name SIMTRON (spatial injection modulation of the electrons). In the SIMTRON the parallel conductance per unit length of the TEM line is modified by the conductance of the electron beam in the interaction region. Because the beam conductance has a negative region in the neighborhood of a transit angle of one-and-a-quarter RF periods, amplification at that frequency range is possible. A numerical design example is presented for the SIMTRON

Keywords

electron field emission; radiofrequency amplifiers; transmission lines; vacuum microelectronics; RF structure; SIMTRON; TEM transmission line; coplanar waveguide; electron field emitter cathode; extended triode; field emitters; high-frequency amplifier; interaction region; numerical design example; parallel conductance; ridge emitter; spatial injection modulation of electrons; vacuum microelectronics structure; Cathodes; Coplanar transmission lines; Coplanar waveguides; Field emitter arrays; Microelectronics; Planar transmission lines; Planar waveguides; Radio frequency; Radiofrequency amplifiers; Transmission line theory;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163470

Filename

163470