DocumentCode
944227
Title
A 3-dimensional computer simulation of the trapped-domain mode in Gunn devices
Author
Atohoun, I.G. ; Riginos, V.E. ; Bohn, P.P.
Author_Institution
COMSAT Laboratories, Clarksburg, MD
Volume
64
Issue
3
fYear
1976
fDate
3/1/1976 12:00:00 AM
Firstpage
385
Lastpage
386
Abstract
This letter discusses the effects of surface charges and the cathode doping notch on the high-field domain propagation in an X-band cylindrical Gunn-effect device. The charges considered are the direct result of Maxwell´s boundary conditions imposed at the device surface. The letter also demonstrates that, for Gunn oscillations to prevail, a 3-dimensional model requires a larger doping fluctuation than a 1-dimensional model.
Keywords
Anodes; Boundary conditions; Cathodes; Computer simulation; Doping; Fluctuations; Gunn devices; Laboratories; Mathematical model; Semiconductor process modeling;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1976.10134
Filename
1454403
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