DocumentCode
944285
Title
Traveling-Wave IMPATT Amplifiers and Oscillators
Author
Mains, Richard K. ; Haddad, George I.
Volume
34
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
965
Lastpage
971
Abstract
Traveling-wave IMPATT oscillators and amplifiers are analyzed using a Iarge-signal transmission-line model. A specific case for a GaAs structure at 33.7 GHz is examined in detail. General equations relating to the design and expected power output from these devices are also developed. It is concluded that more RF power can he generated by traveling-wave structures than is obtainable from discrete IMPATT devices.
Keywords
Admittance; Conductivity; Gallium arsenide; Maxwell equations; Oscillators; Power generation; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Transmission lines;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1986.1133477
Filename
1133477
Link To Document