• DocumentCode
    944874
  • Title

    Very low noise silicon planar avalanche photodiodes

  • Author

    Goedbloed, J.J. ; Smeets, E.T.J.M.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    14
  • Issue
    3
  • fYear
    1978
  • Firstpage
    67
  • Lastpage
    69
  • Abstract
    A silicon n+¿p¿¿¿p+ reach-through avalanche photodiode is described, where the p region has a high-low-high doping profile formed by a combination of ion implantation and epitaxy. Effective noise factors as low as 0.008¿0.014 have been realised reproducibly for operation in the near-infrared. The influence of the primary photocurrent in the determination of the excess noise is discussed.
  • Keywords
    avalanche diodes; electron device noise; epitaxial growth; ion implantation; photodiodes; epitaxy; excess noise; ion implantation; planar avalanche photodiodes; primary photocurrent; very low noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780047
  • Filename
    4240817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=944874