• DocumentCode
    945262
  • Title

    Low leakage nearly ideal Schottky barriers to n-InP

  • Author

    Wada, O. ; Majerfeld, A.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    14
  • Issue
    5
  • fYear
    1978
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    Au Schottky barriers incorporating an interfacial native oxide have been formed on n type InP. Depending on oxide thickness and annealing conditions these devices exhibit high barrier heights, ¿B > 0.75 eV, ideality factors n as low as 1.04 and very low saturation current densities <~ 10¿7 Acm¿2.
  • Keywords
    III-V semiconductors; Schottky effect; indium compounds; Schottky barriers; annealing conditions; high barrier heights; interfacial native oxide; n type InP; n-InP Schottky barriers; oxide thickness;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780084
  • Filename
    4240882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945262