• DocumentCode
    945293
  • Title

    Boron segregation data for d.m.o.s. devices

  • Author

    Ladbrooke, P.H. ; Strudwick, M.N.

  • Author_Institution
    University of New South Wales, Department of Solid-State Electronics, Kensington, Australia
  • Volume
    14
  • Issue
    5
  • fYear
    1978
  • Firstpage
    128
  • Lastpage
    129
  • Abstract
    A simple formula is given for the extent of boron depletion from the surface channel region of a d.m.o.s. f.e.t. during fabrication.
  • Keywords
    doping profiles; insulated gate field effect transistors; semiconductor technology; B segregation data; DMOS FETs; surface channel region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780087
  • Filename
    4240885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945293