DocumentCode
945309
Title
A 12-dB High-Gain Monolithic Distributed Amplifier
Author
Larue, Ross A. ; Bandy, Steve G. ; Zdasiuk, George A.
Volume
34
Issue
12
fYear
1986
fDate
12/1/1986 12:00:00 AM
Firstpage
1542
Lastpage
1547
Abstract
By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction is achieved in a novel monolithic distributed amplifier by replacing the common-source FET´s of the conventional design with cascode elements having a gate length of one-quarter micron. A record gain of over 10 dB from 2 to 18 GHz and a noise figure of 4 dB at 7 GHz have been achieved on a working amplifier. Details of the design and fabrication process are described.
Keywords
Bandwidth; Capacitance; Circuits; Distributed amplifiers; FETs; Fabrication; Frequency; Gain; Impedance; Noise figure;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1986.1133576
Filename
1133576
Link To Document