DocumentCode :
945753
Title :
Direct modulation of InGaAsP/InP double heterostructure lasers
Author :
Akiba, Shigeyuki ; Sakai, Kenji ; Yamamoto, Takayuki
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Volume :
14
Issue :
6
fYear :
1978
Firstpage :
197
Lastpage :
198
Abstract :
Direct modulation of an InGaAsP/InP double heterostructure laser was investigated experimentally. Sinusoidal modulation up to 2.5 GHz was achieved with almost constant modulation efficiency. Pulse responses showed that the damped relaxation oscillation in light output was well suppressed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; 2.5 GHz; InGaAsP-InP laser; damped relaxation oscillation; direct modulation; double heterostructure lasers; sinusoidal modulation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780131
Filename :
4240984
Link To Document :
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