Title :
Planar indium-diffused lead telluride detector arrays
Author :
Gooch, C.H. ; Tarry, H.A. ; Bottomley, R.C. ; Astles, M.G. ; Waldock, B.J.
Author_Institution :
Royal Signals and Radar Establishment, Baldock, UK
Abstract :
Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ¿ 10 ¿ cm2 at 180 K and a black body detectivity (D* 500 K) ¿ 6×109 cm Hz¿ W¿1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.
Keywords :
photodetectors; Auger limited lifetime; PbTe:In; abrupt junction model; black body detectivity; planar detector arrays; responsivity variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780141
