DocumentCode
945910
Title
Power devices in gallium arsenide
Author
Atkinson, C.J.
Author_Institution
GEC Research Ltd., GEC Hirst Research Centre, Wembley, UK
Volume
132
Issue
6
fYear
1985
fDate
12/1/1985 12:00:00 AM
Firstpage
264
Lastpage
271
Abstract
The use of gallium arsenide for power devices has recently been the subject of a number of papers. The paper examines the properties of gallium arsenide relevant to power device behaviour together with published results on power devices made in gallium arsenide.
Keywords
III-V semiconductors; Schottky-barrier diodes; bipolar transistors; gallium arsenide; junction gate field effect transistors; power transistors; reviews; solid-state rectifiers; thyristors; GaAs; III-V semiconductors; JFET; Schottky-barrier diode-rectifiers; bipolar devices; dynamic response; fast response diodes; heterojunction technology; junction FET; majority carrier devices; minority carrier devices; p-n junction rectifiers; power device; reviews; thyristors; transistors;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Proceedings I
Publisher
iet
ISSN
0143-7100
Type
jour
DOI
10.1049/ip-i-1.1985.0059
Filename
4648171
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