DocumentCode :
946155
Title :
Internal Feedback and Neutralization of Transistor Amplifiers
Author :
Stern, A.P. ; Aldridge, C.A. ; Chow, W.F.
Author_Institution :
Electronics Lab., General Electric Co., Syracuse, N.Y.
Volume :
43
Issue :
7
fYear :
1955
fDate :
7/1/1955 12:00:00 AM
Firstpage :
838
Lastpage :
847
Abstract :
Transistors are nonunilateral amplifying devices. The most important effects of internal feedback are reflected immittances and potential instability of amplifiers in certain frequency ranges. These phenomena are undesirable in many applications. Considering the various matrix representations of a two-terminal pair one can show that by connecting appropriate networks in a suitable manner to the active nonunilateral element, the internal feedback of the latter can be removed (neutralized). Several neutralized transistor arrangements have been investigated experimentally. The circuits are based on an analysis of the properties of transistor feedback parameters at "higher" frequencies. Neutralization throughout relatively wide bands of frequencies can be achieved using simple feedback arrangements. The maximum available power gain of transistor amplifiers is only moderately affected by neutralization.
Keywords :
Admittance; Electron tubes; Feedback circuits; Feedback loop; Frequency; Impedance; Joining processes; Power amplifiers; Senior members; Wideband;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1955.278150
Filename :
4055509
Link To Document :
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