Title :
An Efficient Approach for Large-Signal Modeling and Analysis of the GaAs MESFET
Author :
Hwang, Vincent D. ; Itoh, Tatsuo
fDate :
4/1/1987 12:00:00 AM
Abstract :
A nonlinear circuit model of the GaAs MESFET is developed by extracting circuit parameters from dc and small-signal RF measurements in a systematic manner. The circuit model is then analyzed by an efficient algorithm called the modified multiple-reflection method. For the first time, this method is applied to MESFET circuit analysis. Compared with the original multiple-reflection method, the modified multiple-reflection method shows a dramatic increase in convergence speed. The validity of the nonlinear MESFET model is confirmed by comparing the simulation results with experimental data.
Keywords :
Analytical models; Circuit analysis; Differential equations; Gallium arsenide; MESFET circuits; Nonlinear circuits; Numerical models; Radio frequency; Time domain analysis; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1987.1133661