• DocumentCode
    946572
  • Title

    Effects of single impurity scattering on one-dimensional quantum-effect devices

  • Author

    del Alamo, Jesus A. ; Melloch, M.R. ; Rooks, Michael J.

  • Volume
    39
  • Issue
    11
  • fYear
    1992
  • fDate
    11/1/1992 12:00:00 AM
  • Firstpage
    2642
  • Lastpage
    2643
  • Abstract
    Summary form only given. It is shown that a severe degradation in the quantum-effect features occurs when only a single impurity exists in the device. Transport in different lateral regions of the waveguide is studied for a 0.5-μm-long, 0.3-μm-wide waveguide. As the waveguide is opened to include a single impurity, an immediate and drastic degradation in the conductance steps is observed, because the presence of the impurity in the channel makes the transmission probability energy dependent and less than unity. By analyzing which 2e2/h conductance step becomes distorted, the location of two single impurities is pinpointed. One lies very near the thin middle common barrier, while the other lies closer to the outer side barrier. Moreover, in a waveguide containing two impurities, the familiar oscillations in the tunneling current corresponding to the sweeping of the 1D subbands through the Fermi level are completely washed out, due to mode mixing in the vicinity of the impurities
  • Keywords
    Fermi level; impurity scattering; quantum interference devices; tunnelling; 1D subbands; Fermi level; conductance steps; mode mixing; quantum-effect devices; single impurity scattering; transmission probability; tunneling current; waveguide; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; Hall effect; Impurities; Particle scattering; Silicon germanium; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.163492
  • Filename
    163492