DocumentCode
946572
Title
Effects of single impurity scattering on one-dimensional quantum-effect devices
Author
del Alamo, Jesus A. ; Melloch, M.R. ; Rooks, Michael J.
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2642
Lastpage
2643
Abstract
Summary form only given. It is shown that a severe degradation in the quantum-effect features occurs when only a single impurity exists in the device. Transport in different lateral regions of the waveguide is studied for a 0.5-μm-long, 0.3-μm-wide waveguide. As the waveguide is opened to include a single impurity, an immediate and drastic degradation in the conductance steps is observed, because the presence of the impurity in the channel makes the transmission probability energy dependent and less than unity. By analyzing which 2e 2/h conductance step becomes distorted, the location of two single impurities is pinpointed. One lies very near the thin middle common barrier, while the other lies closer to the outer side barrier. Moreover, in a waveguide containing two impurities, the familiar oscillations in the tunneling current corresponding to the sweeping of the 1D subbands through the Fermi level are completely washed out, due to mode mixing in the vicinity of the impurities
Keywords
Fermi level; impurity scattering; quantum interference devices; tunnelling; 1D subbands; Fermi level; conductance steps; mode mixing; quantum-effect devices; single impurity scattering; transmission probability; tunneling current; waveguide; Electron mobility; Epitaxial layers; FETs; Germanium silicon alloys; Hall effect; Impurities; Particle scattering; Silicon germanium; Temperature distribution; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163492
Filename
163492
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