Title :
Gate length electric parameter dependences of ultra-submicrometre delta -doped pseudomorphic HEMTs
Author :
Aniel, F. ; Jin-Delorme, Y. ; Crozat, P. ; de Lustrac, A. ; Adde, R. ; Van Hove, M. ; De Raedt, W. ; van Rossum, M. ; Jin, Y. ; Launois, H.
Author_Institution :
Univ. Paris-Sud, Orsay, France
Abstract :
AlGaAs/InGaAs/GaAs MODFETs having 20% indium in the channel and Si planar doping (5*10 12 cm -2) have been fabricated with gate lengths of 0.1-0.7 mu m and a width of 100 mu m. Gates that are longer than 0.2 mu m are T-shaped and the narrower gates (0.1 and 0.15 mu m) are triangular. From DC measurement a maximum G m of 1100 mS/mm has been obtained. The current gain cutoff frequency F t corrected for the access resistances is 145 GHz, corresponding to an intrinsic transition frequency of 220 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; solid-state microwave devices; 0.1 to 0.7 micron; 100 micron; 1100 mS; 145 GHz; 220 GHz; DC measurement; GaAs:Si-AlGaAs:Si-InGaAs-GaAs; MODFETs; Si planar doping; T-shaped; delta -doped pseudomorphic HEMTs; gate length electric parameter dependence; transconductance; triangular shape; ultra-submicrometre;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931046
