Gated micrometer-size electron field emitters

Author

Liu, Deming ; Ravi, T.S. ; Marcus, R.B.

Author_Institution

Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2648

Lastpage

2649

Abstract

Summary form only given. A procedure has been developed for making arrays of gated micrometer-size electron field emitters from silicon with some advantages over similar processes developed elsewhere. One-micron-high emitters are made with radii as small as 1 nm, and with self-aligned flat gate electrodes with low capacitance and with the circular gate opening controlled to submicrometer diameter independently of the tip height. Emission measurements show expected Fowler-Nordheim behavior, with the Fowler-Nordheim curves (I/V² versus 1/V) parallel but displaced along the 1/V axis for different tips. The field factor K (where E=K×V) is derived from the measured slope, and the emission area is derived from K, the Fowler-Nordheim equation, and an assumed work function

Keywords

electron field emission; elemental semiconductors; silicon; vacuum microelectronics; Fowler-Nordheim curves; Si; circular gate opening; emission area; field factor; gated micrometer-size electron field emitters; low capacitance; self-aligned flat gate electrodes; Circuits; Electron emission; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Silicon compounds; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163503

Filename

163503