Title :
Simple expression for conversion gain of MESFET drain mixers
Author :
Cayrou, J.C. ; Gayral, M. ; Graffeuil, J. ; Sautereau, J.F.
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
A straightforward analytical expression of the conversion gain of a MESFET drain mixer is proposed, based on the assumption that the transconductance and drain resistance are the main nonlinearities, and on a few additional simplifications. The results are in good agreement with the harmonic balance simulations and experimental values.<>
Keywords :
Schottky gate field effect transistors; mixers (circuits); solid-state microwave circuits; MESFET drain mixers; conversion gain; drain resistance; harmonic balance simulations; nonlinearities; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931009
