Title :
Modulation of room-temperature GaAs lasers at X-band frequencies
Author :
Lakshminarayana, Mysore R. ; Hunsperger, Robert G. ; Partain, Larry D.
Author_Institution :
University of Delaware, Department of Electrical Engineering, Newark, USA
Abstract :
GaAs lasers operating at room temperature are directly modulated at X-band frequencies. A fast silicon avalanche photodiode is used to demodulate the laser light.
Keywords :
III-V semiconductors; gallium arsenide; optical modulation; semiconductor junction lasers; GaAs lasers; X-band frequencies; fast silicon avalanche photodiode; modulation; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780430
