• DocumentCode
    947925
  • Title

    Suppression of Auger recombination effects in compressively strained quantum-well lasers

  • Author

    Lui, Wayne W. ; Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Yokoyama, Kiyoyuki ; Seki, Shunji

  • Author_Institution
    NTT Corp., Kanagawa, Japan
  • Volume
    29
  • Issue
    6
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    1544
  • Lastpage
    1552
  • Abstract
    Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has been carried out. The recombination current is found to increase with carrier density, but at a rate far less rapidly than the conventional n3-rule has suggested. At moderate carrier densities, the recombination current is also found to decrease exponentially with increasing strain
  • Keywords
    Auger effect; Monte Carlo methods; laser theory; semiconductor lasers; Auger recombination effects; Monte Carlo analysis; carrier density; compressively strained quantum-well lasers; detailed valence band structure; increasing strain; moderate carrier densities; recombination current; Capacitive sensors; Charge carrier density; Diode lasers; Monte Carlo methods; Quantum well lasers; Radiative recombination; Semiconductor diodes; Semiconductor lasers; Statistics; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.234389
  • Filename
    234389
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947925