Title :
Energy-band diagrams of p-i-n heterostructures for single quantum-well lasers
Author :
Lee, Johnson ; Vassell, M.O. ; Jan, G.J.
Author_Institution :
GTE Labs. Inc., Waltham, MA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The variations of energy-band diagrams with forward bias voltages for step separate-confinement-heterostructure single quantum-well lasers operated below threshold are investigated by numerically solving the semiconductor device equations with two band parameters described by the generalized Einstein relation and with various position-dependent parameters for the materials. The effects of band-gap shrinkage are included. By examining band diagrams, it is found that the potential profiles of the quantum wells with respect to the centres of the wells are symmetric at high injection, tilted at low injection, or almost flat with reasonable injection. In the intrinsic regions, the difference of the quasi-Fermi potentials can be well approximated by the applied voltage. At high injection, the current density of the I-V characteristic and the current injection efficiency of the device may be overestimated by using the Boltzmann statistics when compared with the Fermi-Dirac statistics
Keywords :
band structure of crystalline semiconductors and insulators; band theory models and calculation methods; carrier mobility; laser theory; p-i-n diodes; semiconductor device models; semiconductor lasers; semiconductor quantum wells; statistical analysis; Boltzmann statistics; Fermi-Dirac statistics; I-V characteristic; SCH SQW lasers; SQW profiles; applied voltage; band parameters; band-gap shrinkage; below threshold; current density; current injection efficiency; energy band diagrams; forward bias voltages; generalized Einstein relation; high injection; intrinsic regions; low injection; p-i-n heterostructures; position-dependent parameters; potential profiles; quasi-Fermi potentials; semiconductor device equations; single quantum-well lasers; step separate-confinement-heterostructure single quantum-well lasers; well profiles; Equations; Optical materials; PIN photodiodes; Photonic band gap; Potential well; Quantum well lasers; Semiconductor devices; Semiconductor materials; Statistics; Threshold voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of