Title :
Reliable 100-mW strained-layer ridge waveguide lasers
Author :
Heath, L.S. ; Meehan, Kevin ; Chin, A.K. ; Wober, Munib
Author_Institution :
Polaroid Corp., Cambridge, MA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. Reliable operation of InGaAs quantum-well strained-layer single-mode ridge waveguide lasers at 100 mW has been achieved. A separate-confinement, In0.2Ga0.8As single-quantum-well heterostructure was grown by metal-organic chemical vapor deposition. The lasers operate in the fundamental transverse mode to 100 mW, and in higher order modes to a maximum output power of 300 mW, where thermal rollover occurs. Nine lasers were aged at 25°C for 1000 h at constant current corresponding initially to a power of 100 mW. After aging, the current required to obtain 100 mW increased by 3% on average. The median lifetime for these lasers is estimated to be 40000 h
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; laser modes; optical waveguides; semiconductor device testing; semiconductor lasers; 100 to 300 mW; 1000 h; 25 degC; 40000 h; In0.2Ga0.8As; ageing; fundamental transverse mode; median lifetime; metal-organic chemical vapor deposition; reliable operation; single-quantum-well heterostructure; strained-layer ridge waveguide lasers; thermal rollover; Aging; Chemical lasers; Chemical vapor deposition; Indium gallium arsenide; Laser modes; Life estimation; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on