Title :
All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
Author :
Noda, Susumu ; Yamashita, Takao ; Ohya, Masaki ; Muromoto, Yoshitaka ; Sasaki, Akio
Author_Institution :
Dept. of Electr. Eng., Kyoto Univ., Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
An all-optical modulation method for semiconductor lasers using three energy levels in n-doped quantum wells is demonstrated. The modulation principle is based on the third-order interaction between interband-and intersubband-resonant light in the quantum-well structure. The modulation is demonstrated by a real-time single-shot experiment using a semiconductor laser for the interband-resonant light and a CO 2 laser for the intersubband-resonant light. The dependences of the modulation depth on the intersubband-resonant light polarization and on the interband-resonant light wavelength indicate that the modulation is achieved by this principle. It is pointed out that the thermal effect appears when the power of the intersubband-resonant light becomes strong
Keywords :
light polarisation; measurement by laser beam; optical modulation; semiconductor lasers; semiconductor quantum wells; streak photography; CO2 laser; all-optical modulation method; energy levels; interband-resonant light; interband-resonant light wavelength; intersubband-resonant light; intersubband-resonant light polarization; light power; modulation depth; modulation principle; n-doped quantum wells; quantum-well structure; real-time single-shot experiment; semiconductor laser; semiconductor lasers; thermal effect; third-order interaction; Absorption; Chirp; Electrons; Energy states; Laser transitions; Optical modulation; Optoelectronic devices; Quantum well lasers; Semiconductor lasers; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
