Title :
High-mobility fully depleted thin-film SOS MOSFET´s
Author :
Roser, Miran ; De La Houssaye, P.R. ; Garcia, Gonzalo Andres
Author_Institution :
US Naval Command, Control & Ocean Surveillance Center, San Diego, CA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. Transistor characteristics for improved, fully depleted thin-film (100-nm thick) silicon-on-sapphire (SOS) MOSFETs with 25-nm gate oxides were measured for various gate lengths from 15 to 300 K with measurements taken at 10 K intervals. Peak hole mobilities as high as 250 cm2/V-s at 300 K and 1700 cm2 /V-s at 77 K were measured in p-channel MOSFETs. Measurements of corresponding n-channel devices of the same dimensions have revealed electron mobilities of 360 cm2/V-s at 300 K and 590 cm2 /V-s at 77 K. The high hole mobility behavior unique to SOS may be attributed to stress in the thin silicon film due to the sapphire interface
Keywords :
carrier mobility; elemental semiconductors; insulated gate field effect transistors; sapphire; silicon; thin film transistors; 15 to 300 K; Si-Al2O3; fully depleted; hole mobilities; n-channel devices; p-channel MOSFETs; sapphire interface; thin-film SOS; Active matrix liquid crystal displays; Dielectrics; Frequency; Hydrogen; MOSFET circuits; Plasma devices; Plasma measurements; Plasma temperature; Stress; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on